View IRF7342Q_9091133.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet ? power mosfet description v dss = -55v r ds(on) = 0.105 parameter max. units v ds drain- source voltage -55 v i d @ t c = 25c continuous drain current, v gs @ 10v -3.4 i d @ t c = 70c continuous drain current, v gs @ 10v -2.7 a i dm pulsed drain current -27 p d @t c = 25c power dissipation 2.0 p d @t c = 70c power dissipation 1.3 linear derating factor 0.016 w/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10 s3 0 v e as single pulse avalanche energy 114 dv/dt peak diode recovery dv/dt 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings d1 d1 d2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 so-8 advanced process technology ultra low on-resistance dual p channel mosfet surface mount available in tape & reel 150c operating temperature lead-free
form quantity IRF7342Qpbf so-8 tube/bulk 95 IRF7342Qpbf eol 529 IRF7342Qpbf so-8 tape and reel 4000 IRF7342Qtrpbf eol notice package type standard pack orderable part number base part number parameter typ. max. units r ja maximum junction-to-ambient CCC 62.5 c/w thermal resistance

! " these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremelylow on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. downloaded from: http:///

! "
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 CCC CCC v v gs = 0v, i d = -250 a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.054 CCC v/c reference to 25c, i d = -1ma CCC 0.095 0.105 v gs = -10v, i d = -3.4a CCC 0.150 0.170 v gs = -4.5v, i d = -2.7a v gs(th) gate threshold voltage -1.0 CCC CCC v v ds = v gs , i d = -250 a g fs forward transconductance 3.3 CCC CCC s v ds = -10v, i d = -3.1a CCC CCC -2.0 v ds = -55v, v gs = 0v CCC CCC -25 v ds = -55v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 26 38 i d = -3.1a q gs gate-to-source charge CCC 3.0 4.5 nc v ds = -44v q gd gate-to-drain ("miller") charge CCC 8.4 13 v gs = -10v, see fig. 10 t d(on) turn-on delay time CCC 14 22 v dd = -28v t r rise time CCC 10 15 i d = -1.0a t d(off) turn-off delay time CCC 43 64 r g = 6.0 t f fall time CCC 22 32 r d = 16 , c iss input capacitance CCC 690 CCC v gs = 0v c oss output capacitance CCC 210 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 86 CCC ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified) #
$$
%$
$$
&!' parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time CCC 54 80 ns t j = 25c, i f = -2.0a q rr reverse recoverycharge CCC 85 130 nc di/dt = -100a/ s source-drain ratings and characteristics ((( ((( ((( ((( $ ) $ s d g repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd -3.4a, di/dt -150a/ s, v dd v (br)dss , t j 150c notes: starting t j = 25c, l = 20mh r g = 25 , i as = -3.4a. (see figure 8) pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec downloaded from: http:///
*

! "
0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v

0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v 1 10 100 3 4 5 6 7 v = -25v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j downloaded from: http:///

! "

!

"#$% &
!

!

!' 0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v + , -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a " $ $
%
( ) 0.05 0.15 0.25 0.35 0.45 2581 11 4 a gs -v , gate-to-source voltage (v) i = -3.4 a d downloaded from: http:///
-

! "
0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds '
! '
!

"#& %

()* $+ $ 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss downloaded from: http:///
.

! "
so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code

! "
# downloaded from: http:///
)

! "
330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches)

!"
# downloaded from: http:///
/

! "
ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 revision history date comment ? updated data sheet based on corporate template. ? added qual level on page 8. ? added ordering information and updated to reflect the end-of-life (eol) of the tu be option (eol notice #529) on page1. 8/22/2014 downloaded from: http:///

▲Up To Search▲

Price & Availability of IRF7342Q

	To Download IRF7342Q Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .